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Improving the precision of Hall effect measurements using a single-crystal copper probe
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10.1063/1.3677333
/content/aip/journal/rsi/83/1/10.1063/1.3677333
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/1/10.1063/1.3677333

Figures

Image of FIG. 1.
FIG. 1.

Process of single-crystal copper (SCC) growth using the Czochralski method.

Image of FIG. 2.
FIG. 2.

(a) Electric discharge machining (EDM) process and (b) x-ray diffraction (XRD) pattern obtained for pieces fabricated from SCC using the EDM process.

Image of FIG. 3.
FIG. 3.

SCC components for Hall measurements made by the wire-EDM method.

Image of FIG. 4.
FIG. 4.

(a) SCC disk and (b) wires fabricated from the disk using the wire-EDM process (Ref. 9).

Image of FIG. 5.
FIG. 5.

Complete Hall effect measurement kit with SCC components. (a) Elimination of the electrode of the printed circuit board (PCB) made of coarse copper; (b) part of the measurement probes using SCC; (c) front part of the measurement kit made using SCC; (d) rear part of the measurement kit made using SCC wire (the solder at the corners of the right side was used only for fixing the pins; the wires and components made of SCC were ultrasonically welded together).

Image of FIG. 6.
FIG. 6.

Carrier density (n) and mobility (μ) of ITO thin film measured using the conventional Hall effect measurement kit and the SCC kit.

Image of FIG. 7.
FIG. 7.

(a) Carrier concentration (top) and (b) mobility (bottom) measured at low current density values for various samples: ITO, ZnO, ZnCoO:H, p-type ZMO (all thin film samples), and bulk n-Si substrate.

Tables

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Table I.

Standard deviation of Hall effect measurement values.

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/content/aip/journal/rsi/83/1/10.1063/1.3677333
2012-01-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving the precision of Hall effect measurements using a single-crystal copper probe
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/1/10.1063/1.3677333
10.1063/1.3677333
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