(a) Schematic of the von Hamos geometry. (b) Projection along the axis of dispersion, (c) projection along focusing plane, (d) the same as (c) but for segmented-type of focusing.
(a) Schematic representation of von Hamos geometry for solid angle calculations, (b) the energy dependence of total solid angle (red line), and solid angle per eV for 25 cm radius of curvature.
Photograph of a segmented Si(111) crystal glued on a curved glass support.
(a) The elastic scattering peak (open circles) measured with the Si(111) diced crystal at a beam energy of 8800 eV. The red solid line corresponds to the results of x-ray tracing simulations and (b) the calculated 2D distribution of the x-ray hit points on the detector plane. The projection of this distribution onto the energy axis is given by the red curve in the top panel.
The experimental energy resolution versus incident photon energy (blue) compared to the results of x-ray tracing simulations (red). The calculated contributions to the total resolution are also shown: intrinsic crystal resolution (grey), effects of segmented focusing (purple), source size (orange), and energy resolution of incident beam.
The RIXS planes for Cu2O and CuO compounds recorded each in an acquisition time of only 7 s. The blue lines (top panels) correspond to the non-resonant XES spectra and the red lines to the high energy resolution XAS spectra. The profiles obtained for a constant energy transfer are shown in the bottom panel (gray lines).
Kβ1,3 and valence-to-core x-ray emission for CuO recorded without scanning any beamline nor spectrometer component during acquisition. (Top) The acquisition times were chosen to correspond to absorption doses of 4.5 × 1015 photons (top panel) and 6 × 1012 photons (bottom panel), respectively.
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