(a) Layout of the field sputtering system; FE: electrical feedthrough for the coils of the electromagnet, 2 3/4″ conflat flange (CF); PS2, PS1: bipolar power supplies (Kepco BOP 20-20M) for coil pairs 2 and 1, respectively; DAQ: MIO DAQ (NI 6212); (b) shape and dimensions of the silicon steel core (4% Si, Scientific Alloys); (c) coils arrangement of the electromagnet and magnetic flux in the core.
(a) Schematic: vector sum of the two orthogonal fluxes at the center point of the electromagnet; (b) the correspondence between the sputtering field and the applied ac currents; as shown in the middle panel, different choice in the initial phase ϕ would make the field start rotating at a different angle θ.
Linear relationship between the applied voltage control and measured magnitude of the rotating magnetic field.
(a) Alignment of the sample and the sputtering field; the field direction is determined by the initial phase ϕ; the default setting of ϕ = 0 results in a sputtering field parallel to the sample reference axis; (b) FMR setup configuration: the film side of the sample is facing the coplanar waveguide (CPW); the sputtering field direction is also the easy axis of the sample with uniaxial induced anisotropy.
(a) B-H loop of sample 1 in set 1; (b) B-H loop of sample 2 in set 1; (c) B-H loop of sample 1 in set 2; (d) FMR Kittel relation of sample 1 in set 2.
Change of ferromagnetic resonance field H0 at 4 GHz, as the angle α between the FMR bias field H B and the sample reference axis R varies from 0° to 180°.
Change of ferromagnetic resonance field H 0 at 4 GHz, as the initial phase of the rotating magnetic field ϕ varies from 0° to 180°; each data point corresponds to one samplea; FMR setup configuration for samples 2-9: the induced anisotropy of the film is determined by the sputtering field direction; the sample reference axis is always parallel with the FMR bias field.
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