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Note: ɛ(T) dependence behavior in GaP diodes at high temperatures
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10.1063/1.4727869
/content/aip/journal/rsi/83/6/10.1063/1.4727869
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/6/10.1063/1.4727869

Figures

Image of FIG. 1.
FIG. 1.

Typical C(T) characteristics of GaP diodes: Experimental data are shown as separate points and solid lines are the approximation of experimental data by the least-squares fit.

Image of FIG. 2.
FIG. 2.

Calculated temperature dependences of the junction potential (V b U − 2k B T/q).

Image of FIG. 3.
FIG. 3.

Temperature dependence of averaged differences Δɛ.

Image of FIG. 4.
FIG. 4.

Averaged ɛ(T) dependence of GaP in the diode base layer.

Tables

Generic image for table
Table I.

Parameters of C(T) and V  (T) dependences.

Generic image for table
Table II.

Calculated values of ɛ 2 E g products.

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/content/aip/journal/rsi/83/6/10.1063/1.4727869
2012-06-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Note: ɛ(T) dependence behavior in GaP diodes at high temperatures
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/6/10.1063/1.4727869
10.1063/1.4727869
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