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Typical C(T) characteristics of GaP diodes: Experimental data are shown as separate points and solid lines are the approximation of experimental data by the least-squares fit.
Calculated temperature dependences of the junction potential (V b − U − 2k B T/q).
Temperature dependence of averaged differences Δɛ.
Averaged ɛ(T) dependence of GaP in the diode base layer.
Parameters of C(T) and V ′ (T) dependences.
Calculated values of ɛ 2 E g products.
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