1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
oa
Low frequency pressure modulation of indium antimonide
Rent:
Rent this article for
Access full text Article
/content/aip/journal/rsi/83/7/10.1063/1.4737142
1.
1. M. A. Meier, U.S. patent 7,295,494 B2, (13 November, 2007).
2.
2. Semiconductors and Semimetals Volume 3, Optical Properties of III-V Compounds, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1967).
3.
3. Semiconductors and Semimetals, Volume 3, Optical Properties of III-V Compounds, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1967), p. 170.
4.
4. S. W. Kurnick and J. M. Powell, “Optical absorption in pure single crystal InSb at 298 K and 78 K,” Phys. Rev. 116(3), 597604 (1959).
http://dx.doi.org/10.1103/PhysRev.116.597
5.
5. Semiconductor Parameters, edited by M. Levinshtein, S. Rumyantsev, and M. Shur (World Scientific, NJ, 1996), Vol. 1.
6.
6. S. Wei and A. Zunger, “Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends,” Phys. Rev. B 60(8), 54045411 (1999).
http://dx.doi.org/10.1103/PhysRevB.60.5404
7.
7. W. A. Brantley, “Calculated elastic constants for stress problems associated with semiconductor devices,” J. Appl. Phys. 44(1), 534535 (1973).
http://dx.doi.org/10.1063/1.1661935
8.
8. J. F. Nye, Physical Properties of Crystals Their Representation by Tensors and Matrices (Oxford University Press, Oxford, 1985).
9.
9. G. B. Erdakos and S. Ren, “Poisson's Ratios in Diamond/Zincblende Crystals,” J. Phys. Chem. Solids 59(1), 2126 (1998).
http://dx.doi.org/10.1016/S0022-3697(97)00120-0
10.
10. Deceased.
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/7/10.1063/1.4737142
Loading
/content/aip/journal/rsi/83/7/10.1063/1.4737142
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/rsi/83/7/10.1063/1.4737142
2012-07-31
2014-08-30

Abstract

A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gappressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient α of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

Loading

Full text loading...

/deliver/fulltext/aip/journal/rsi/83/7/1.4737142.html;jsessionid=3r7uj8afqtq8a.x-aip-live-06?itemId=/content/aip/journal/rsi/83/7/10.1063/1.4737142&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/rsi
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low frequency pressure modulation of indium antimonide
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/7/10.1063/1.4737142
10.1063/1.4737142
SEARCH_EXPAND_ITEM