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Low frequency pressure modulation of indium antimonide
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1.
1. M. A. Meier, U.S. patent 7,295,494 B2, (13 November, 2007).
2.
2. Semiconductors and Semimetals Volume 3, Optical Properties of III-V Compounds, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1967).
3.
3. Semiconductors and Semimetals, Volume 3, Optical Properties of III-V Compounds, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1967), p. 170.
4.
4. S. W. Kurnick and J. M. Powell, “Optical absorption in pure single crystal InSb at 298 K and 78 K,” Phys. Rev. 116(3), 597604 (1959).
http://dx.doi.org/10.1103/PhysRev.116.597
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5. Semiconductor Parameters, edited by M. Levinshtein, S. Rumyantsev, and M. Shur (World Scientific, NJ, 1996), Vol. 1.
6.
6. S. Wei and A. Zunger, “Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends,” Phys. Rev. B 60(8), 54045411 (1999).
http://dx.doi.org/10.1103/PhysRevB.60.5404
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7. W. A. Brantley, “Calculated elastic constants for stress problems associated with semiconductor devices,” J. Appl. Phys. 44(1), 534535 (1973).
http://dx.doi.org/10.1063/1.1661935
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8. J. F. Nye, Physical Properties of Crystals Their Representation by Tensors and Matrices (Oxford University Press, Oxford, 1985).
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9. G. B. Erdakos and S. Ren, “Poisson's Ratios in Diamond/Zincblende Crystals,” J. Phys. Chem. Solids 59(1), 2126 (1998).
http://dx.doi.org/10.1016/S0022-3697(97)00120-0
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10. Deceased.
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/7/10.1063/1.4737142
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Figures

Image of FIG. 1.

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FIG. 1.

The lumped parameter resonator and electronics.

Image of FIG. 2.

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FIG. 2.

Photograph of the lumped parameter resonator and laser detector mounted on the laser table.

Image of FIG. 3.

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FIG. 3.

PZT sample mounted on the lumped parameter resonator.

Image of FIG. 4.

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FIG. 4.

Model for the compliance between the accelerometers.

Image of FIG. 5.

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FIG. 5.

Accelerometer displacement (Δx A ) and PZT displacement (Δx PZT ).

Image of FIG. 6.

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FIG. 6.

Frequency scan of the lumped parameter resonator.

Image of FIG. 7.

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FIG. 7.

Laser diagnostic optical configuration.

Image of FIG. 8.

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FIG. 8.

Optical layout for InSb attenuation measurements.

Image of FIG. 9.

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FIG. 9.

(a) Typical detector signal for (100) InSb attenuation measurement and (b) reference measurement.

Image of FIG. 10.

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FIG. 10.

Absorption coefficients for the (111) wafer, (100) wafer, and the (211) wafer. Solid lines indicate the mean values.

Image of FIG. 11.

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FIG. 11.

InSb mounted on the lumped parameter resonator.

Image of FIG. 12.

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FIG. 12.

Laser intensity and power spectrum during LPR operation.

Image of FIG. 13.

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FIG. 13.

(a) Unfiltered and (b) filtered laser intensity from 30–33 ms.

Image of FIG. 14.

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FIG. 14.

Uniaxial pressure measured by the laser diagnostic and the accelerometers.

Tables

Generic image for table

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Table I.

Mass of LPR components.

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Table II.

InSb wafers used in measurements.

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Table III.

InSb elastic parameters.

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/content/aip/journal/rsi/83/7/10.1063/1.4737142
2012-07-31
2014-04-19

Abstract

A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gappressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient α of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low frequency pressure modulation of indium antimonide
http://aip.metastore.ingenta.com/content/aip/journal/rsi/83/7/10.1063/1.4737142
10.1063/1.4737142
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