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Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film: Demonstration on AlN
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10.1063/1.4788936
/content/aip/journal/rsi/84/1/10.1063/1.4788936
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/1/10.1063/1.4788936
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Scheme of the experimental setup, the probe beam is focused in a BBO crystal to generate the second harmonic. (b) Top view of the studied sample, showing the pattern of the ITO layer. The two surfaces (designated as XL and S, with a 30:1 surface ratio) realize in-series capacitors connected by the full-sheet Mo layer. The measurements are performed on the small capacitor. (c) Cross section sketch of the sample.

Image of FIG. 2.
FIG. 2.

(a) Transient reflectivities obtained on the sample, beside and on the ITO layer, pumped at 880 nm and probed at 440 nm (the thermal background has been substracted). (b) Cross section of the sample and acoustic path of the pulse that is responsible for the studied reflectivity step on the ITO/AlN/Mo stack. (c) Zoom of the studied reflectivity step detected at three different dc voltages (+150 V, 0 V, −150 V).

Image of FIG. 3.
FIG. 3.

(a) The plain line is the model for the reflectivity steps’ magnitude, probed at 435 nm, as a function of the AlN thickness. The inset is a zoom around 1 μm, where the steps’ magnitude at +150, 0, and −150 V has been reported. (b) Evolution of the reflectivity step's magnitude, pumped at 870 nm and probed at 435 nm, for three different dc voltage (+150 V, 0 V, −150 V).

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/content/aip/journal/rsi/84/1/10.1063/1.4788936
2013-01-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film: Demonstration on AlN
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/1/10.1063/1.4788936
10.1063/1.4788936
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