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Practical guide for validated memristance measurements
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10.1063/1.4775718
/content/aip/journal/rsi/84/2/10.1063/1.4775718
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/2/10.1063/1.4775718
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Combined block diagram of the memristance measurement setup and flow chart of validated memristance measurements. The experimental setup uses a Keithley source meter to define the input voltage v in (t) or the input current i in (t) with respect to its amplitude V dc and I dc and to its shape, e.g., linear, exponential, or sinusoidal, to its number of measurement points N s and to the measurement time T s per measurement point for voltage correct (left) and for current correct (right) measurements. The measurement is controlled by a LabVIEW program. This program also collects the output current i(t) (left) and output voltage v(t) (right) data, performs the integration according to Eqs. (4) and (5) and the normalization according to Eqs. (6) and (7) , stores the normalized memristance data in a lookup table and predicts (i-v) curves from normalized memristance curves for input voltage v in (left) and input current i in (right) with corresponding shape and amplitude and arbitrarily chosen N s and T s .

Image of FIG. 2.
FIG. 2.

Charge-flux (q-φ) curve from a 100 Ω and 200 Ω resistor. The insets show the linear (lin), sinusoidal (sin), and exponential (exp) (a) input voltage v in (32 s period T, 7 V amplitude V dc ) and (b) input current i in (32 s period T, 70 mA amplitude I dc for 100 Ω and 35 mA amplitude I dc for 200 Ω) for CW and CCW looping. The number of measurement points in each period amounts to N s = 64 and the measurement time T s per measurement point amounts to T s = 0.5 s. The (q-φ) curve from a resistor lies in the 1st quadrant (I) and in the 3rd quadrant (III), if the input signals are looped CW and CCW, respectively.

Image of FIG. 3.
FIG. 3.

(a) and (b) Unnormalized charge-flux curves from a BFO memristor with a nominal top contact area of 8.92 × 10−2 mm2. The insets show the sinusoidal (sin), linear (lin), and exponential (exp) (a) input voltage v in (32 s period T, 7 V amplitude V dc ) and (b) input current i in (32 s period T, +3 × 10−5 A maximum positive input current and −2 × 10−6 A minimum negative input current). The number of measurement points in each CW and CCW cycle amounts to N s = 64 and the measurement time T s per measurement point amounts to T s = 0.5 s.

Image of FIG. 4.
FIG. 4.

Normalized charge-flux curves from the BFO memristor in Fig. 3 for (a) input voltage and (b) input current. The number of measurement points in each CW and CCW cycle amounts to N s = 64 and the step length amounts to T s = 0.5 s. The turning points of the normalized CW and CCW memristance curve lie at and , respectively.

Image of FIG. 5.
FIG. 5.

(a) Normalized memristance curve in the first (I) quadrant from a BFO memristor with a nominal top contact area of 8.92 × 10−2 mm2 recorded with CW 7 V input voltage v in of different shape. The turning point lies at . (b) Sinusoidal (sin), linear (lin), and exponential (exp) input voltage v in (64 measurement steps N s , 32 ms period T, 7 V amplitude V dc , measurement time T s = 2 s). (c) Normalized charge curves and (d) normalized flux curves for the input voltage v in represented in (b).

Image of FIG. 6.
FIG. 6.

(a) Normalized current curves obtained by differentiating the normalized charge curve (Fig. 5(c) ) recorded on a BFO memristor with a CW input voltage v in of different shape and with the same amplitude. (b) Normalized input voltage curves obtained by differentiating the normalized flux curve (Fig. 5(d) ). Predicted (solid lines) and experimental (symbols) unnormalized output current (c) versus time on a linear scale and (d) versus input voltage on a logarithmic scale.

Image of FIG. 7.
FIG. 7.

(a) Normalized memristance curve from a BFO memristor with a nominal top contact area of 8.92 × 10−2 mm2 recorded with a CW linear (lin) input voltage v in of the same shape and amplitude and different measurement time per measurement point T s = 0.5, 1, 2 s. The turning point lies at . (b) Linear (lin) input voltage v in (64 measurement steps N s , 7 V amplitude V dc , 0.5, 1, and 2 s measurement time T s ). Predicted (solid lines) and experimental (symbols) unnormalized output current (c) versus time on a linear scale and (d) versus input voltage on a logarithmic scale.

Image of FIG. 8.
FIG. 8.

(a) Normalized memristance curve from a BFO memristor with a nominal top contact area of 8.92 × 10−2 mm2 recorded with a CW input voltage v in of the same shape and of different amplitude. The turning point of the normalized CW curves of the memristor lies at = (1,1.85). (b) Linear (lin) input voltage v in with different amplitude (64 measurement steps N s , 32 s period T, measurement time T s = 2 s). Predicted (solid lines) and experimental (symbols) unnormalized output current (c) versus time on a linear scale and (d) versus input voltage v in on a logarithmic scale.

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/content/aip/journal/rsi/84/2/10.1063/1.4775718
2013-02-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Practical guide for validated memristance measurements
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/2/10.1063/1.4775718
10.1063/1.4775718
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