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A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers
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10.1063/1.4791793
/content/aip/journal/rsi/84/2/10.1063/1.4791793
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/2/10.1063/1.4791793

Figures

Image of FIG. 1.
FIG. 1.

Experimental system used to measure the directional polarized radiance of a specimen at angles between the normal to the specimen surface and 80° at maximum.

Image of FIG. 2.
FIG. 2.

Experimental results for p-polarized emissivity-invariant points of silicon wafers with (a) SiO2 films and (b) Si3N4 films at a wavelength of λ = 1.55 μm.

Image of FIG. 3.
FIG. 3.

Experimental relationship between ratio of p- to s-polarized radiances R ps and polarized emissivity ɛ p(s)(θ) for silicon wafers with (a) SiO2 films and (b) Si3N4 films at a wavelength of λ = 1.55 μm and an angle of θ = 75°.

Image of FIG. 4.
FIG. 4.

Principle for separating background radiance of lamps from radiance emitted from measurement specimen.

Image of FIG. 5.
FIG. 5.

Schematic of experimental setup used to estimate background radiance.

Image of FIG. 6.
FIG. 6.

Experimental relationship between wavelength λ and radiance noise parameter R for specular silicon wafers, which is based on the results in Table III (R values used are the averages of p- and s-polarizations).

Image of FIG. 7.
FIG. 7.

Experimental relationship between wavelength λ and radiance noise parameter R for rough (as-sliced) silicon wafers, which is based on the results in Table IV (R values used are the averages of p- and s-polarizations).

Image of FIG. 8.
FIG. 8.

Simulated results of temperature difference ΔT = T a T as a function of noise factor η for λ = 0. 9, 1.55, and 4.5 μm at a brightness temperature of a lamp S = 3000 K and a wafer temperature T = 1023 K, which is based on Eq. (13) .

Image of FIG. 9.
FIG. 9.

Simulated relationship between S and ΔT of a specular surface for λ = 0.9, 1.55, and 4.5 μm and at T = 1023 K, where η is the average value for p- and s-polarizations experimentally determined for each wavelength and at θ = 55°in Table III .

Image of FIG. 10.
FIG. 10.

Example for a practical measurement system.

Tables

Generic image for table
Table I.

Relation between electrical input and brightness temperature S of halogen lamp.

Generic image for table
Table II.

Determination of constants, A, B, and C for the radiometers.

Generic image for table
Table III.

Experimental results for radiance noise parameter R and noise factor η for a specular silicon wafer surface (R a = 0.02 μm).

Generic image for table
Table IV.

Experimental results for radiance noise parameter R and noise factor η for a rough as-sliced silicon wafer surface (R a = 0.08 μm).

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/content/aip/journal/rsi/84/2/10.1063/1.4791793
2013-02-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/2/10.1063/1.4791793
10.1063/1.4791793
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