Schematics of the HMDS treatment.
Top: AFM image of the sample from the experiment 131e. Bottom: Corresponding histogram. The bin size is increased up to 1 nm for illustrative purpose. Inset shows zoomed bottom part of the histogram.
Top: Linear heating scans for 5–6 nm thick as-spun PS films on an untreated (green triangles) and HMDS-treated (black circles) Si. Bottom: AFM images of 5 nm thick PS coatings on HMDS-treated Si: as-spun film (a), the film after heat treatment (b). AFM image of 5 nm thick PS on untreated Si after similar heat treatment (c) is shown for comparison.
Top: Linear heating (red) and cooling (blue) scan of 5.4 nm thick PS on an untreated Si. Sample is annealed at 160 °C beforehand. Bottom: Linear heating (red) and cooling (blue) scans for the 5.2 nm thick PS on HMDS-treated Si. Thin lines are scans within 20–110 °C range (before dewetting) and the first heating scans up to 160 °C (demonstrates dewetting above 120 °C). Thick lines represent the subsequent scans.
First TM heating scan of as-spun film (shown in red) versus subsequent TM scans (black). The sample is 39 nm thick PS on Si. Inset: The first linear heating scan of as-spun film (red) shown in comparison with subsequent linear heating scans. The sample is 37 nm thick PS on Si.
Top: The first TM heating scan of as-spun film (shown in red) versus subsequent TM scans (black) for 5.3 nm thick PS on HMDS-treated Si. Bottom: 3 initial TM scans (red) vs subsequent TM scans (black) after dewetting. The sample is 5.0 nm thick PS on HMDS-treated Si. Inset: The same experiment on untreated Si. The first TM scan (red) and subsequent TM scans (black), PS thickness is 5.2 nm.
Characteristic film thickness values for the representative experiments on the PS film dewetting.
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