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Broadband wide-angle dispersion measurements: Instrumental setup, alignment, and pitfalls
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10.1063/1.4795455
/content/aip/journal/rsi/84/3/10.1063/1.4795455
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/3/10.1063/1.4795455

Figures

Image of FIG. 1.
FIG. 1.

(a) Top view of the experimental setup and (b) schematic of the experimental setup when set to a reflection angle of 70°, A: broadband collimated white light source fixed to a kinematic mount for controlling the horizontal and vertical tilt, B: linear polarizer for controlling the output power, C: linear polarizer for controlling the output polarization, D: adjustable pinhole, E: two stepper motors, F: x-y translational stage, G: cylindrical SiO2 prism, H: detector arm, I: focusing objective, and J: multimode optical fiber routing the collected light to a spectrometer.

Image of FIG. 2.
FIG. 2.

Flow chart outlining the full alignment procedure for the experimental setup shown in Fig. 1 .

Image of FIG. 3.
FIG. 3.

Angular corrections necessary for the collection angle of the detector arm due to substrate induced angular deviations in (a) reflection and (b) transmission. As can be seen, angular deviations are much more significant in reflection than in transmission, but in both cases grow rapidly with incidence angle and substrate thickness.

Image of FIG. 4.
FIG. 4.

(a) Measured reflection spectra from a 50 nm Au film evaporated onto a fused silica/SiO2 substrate coupled to the glass prism via index matching gel. (b) Comparison of the measured SPP dip to that obtained via an analytical transfer matrix calculation, showing indeed a very good match.

Image of FIG. 5.
FIG. 5.

A bilayer Au film structure with an air gap of thickness of d2 = 580 nm. The Au layers are dm = 40 nm thick. The structure is illuminated with TM polarized light from below at various angles θ in order to excite SPPs.

Image of FIG. 6.
FIG. 6.

A multilayer structure composed of three sets of alternating layers of Si enriched silicon nitride and SiO2 on a float glass substrate. The thickness d2 of the silicon nitride layers is 105 nm and the thickness d3 of the SiO2 layers is 275 nm. The structure is illuminated with TE polarized light from below at various angles θ in order to excite BSWs.

Image of FIG. 7.
FIG. 7.

(a) Simulated reflection spectra of the structure shown in Fig. 5 , showing spectral dips of the symmetric and antisymmetric SPPs. (b) Measured reflection spectra for the fabricated structure, showing an excellent agreement between the two.

Image of FIG. 8.
FIG. 8.

(a) Simulated reflection spectra for the structure shown in Fig. 6 , showing a shallow and very narrow BSW dip extending from λ = 1000 nm–500 nm. (b) Measured reflection spectra for the fabricated structure, showing an excellent agreement between the two.

Tables

Generic image for table
Table I.

Details for the alignment steps shown in the flow chart of Fig. 2 .

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/content/aip/journal/rsi/84/3/10.1063/1.4795455
2013-03-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Broadband wide-angle dispersion measurements: Instrumental setup, alignment, and pitfalls
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/3/10.1063/1.4795455
10.1063/1.4795455
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