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Temperature measurements of heated microcantilevers using scanning thermoreflectance microscopy
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10.1063/1.4797621
/content/aip/journal/rsi/84/3/10.1063/1.4797621
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/3/10.1063/1.4797621
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental setup for thermoreflectance measurements of a heated microcantilever under DC or AC operation. (b) An optical micrograph (top-view) of the heated microcantilever. Seven dots with numbering indicate specific positions for thermoreflectance measurements. (c) A scanning electron micrograph (side-view) of the heated microcantilever showing the thickness around the scanning tip.

Image of FIG. 2.
FIG. 2.

(a) Resistance of the heated microcantilever (left y-axis) and thermoreflectance signal at the tip (right y-axis) as a function of the power dissipation in the heated microcantilever. (b) Temperature at the tip measured with micro Raman thermometry as a function of the power dissipation. (c) Thermoreflectance signal measured at the tip (position A) and near the tip (position B) as a function of temperature. (d) Theoretical reflectance of 1.833 and 2.330 μm thick silicon for the wavelength of 633 nm as a function of temperature that strongly depends on the thickness. Thicknesses of 1.833 and 2.330 μm agree with estimation from the scanning electron micrograph shown in Fig. 1(c) .

Image of FIG. 3.
FIG. 3.

(a) Thermoreflectance map of the heated microcantilever during DC operation at 0, 3.9, 7.1, and 9.9 mW. (b) Temperature as a function of the position at 3.9, 7.1, and 9.9 mW. (c) Temperature as a function of the power dissipation along the heated microcantilever (1–7). Position, x, is referenced to the free end of the heated microcantilever (see Fig. 1(b) ).

Image of FIG. 4.
FIG. 4.

(a) Measured thermoreflectance map of the heated microcantilever during AC operation at 20 Hz, 200 Hz, 2 kHz, and 20 kHz modulation with 17 Vpp total excitation. (b) DC temperature as a function of the position which is independent of the modulation frequency. (c) AC temperature as a function of the position at each modulation frequency.

Image of FIG. 5.
FIG. 5.

(a) Simulated temperature map of the heated microcantilever during AC operation at 20 Hz, 200 Hz, 2 kHz, and 20 kHz modulation with 17 Vpp total excitation. (b) DC temperature as a function of the position which is independent of the modulation frequency. (c) AC temperature as a function of the position at each modulation frequency.

Image of FIG. 6.
FIG. 6.

Real (in-phase) and imaginary (out-of-phase) parts of (a) measured thermoreflectance signals and (b) simulated temperatures as a function of the modulation frequency at various positions along the heated microcantilever.

Image of FIG. 7.
FIG. 7.

(a) Thermoreflectance amplitude at 20 Hz, 200 Hz, 2 kHz, and 20 kHz modulation with 17 Vpp total excitation as a function of the frequency normalized by the modulation frequency showing dominant even harmonics. (b) Thermoreflectance amplitude ratio of 2f to 4f as a function of the modulation frequency.

Image of FIG. 8.
FIG. 8.

Thermoreflectance signal resolutions based on Allan variance as a function of the gate time for DC, 20 Hz, 200 Hz, 2 kHz, and 20 kHz modulation with 8.5 V for DC and 17 Vpp AC heating, respectively. The voltage unit for AC operation is Vrms.

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/content/aip/journal/rsi/84/3/10.1063/1.4797621
2013-03-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature measurements of heated microcantilevers using scanning thermoreflectance microscopy
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/3/10.1063/1.4797621
10.1063/1.4797621
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