Schematic view of the novel instrument for XRS, XRR, and XAFS.
Schematic view of the 9-axis sample manipulator in TXRF geometry. The samples are mounted on sample_X, which is supported by sample_Y, sample_Z, sample_ φ, sample_ χ, and sample_ θ (order of the axes).
Yaw, pitch, and roll of sample_Z axis.
The deviating optical constants of the ion implanted silicon (1016 Al cm−2, 1 keV) and surface roughness lead to differences in both the calculated and measured reflectance and thus the XSW field distribution (a). Accurate elemental depth profiles are only obtained if this is taken into account properly (b).
(a) The reflectance dependency on the grazing incidence angle is shown for the double layer sample with a NiC interface measured at a photon energy of 510 eV. (b) The respective angle-dependent count rate of the light elements normalized to the flux, the effective solid angle of detection, and the projected path through the mass deposition per unit area is plotted. From the maximum position of the respective run of the curves the layer sequence can be deduced: BCN and Si. For the analysis of Ni measurements at higher photon energies has to be carried out. Both the XRR and the fluorescence signals were measured simultaneously.
Cr-Kα GIXRF spectra taken for different tilt angles φ between the plane of incidence and the line structures at incident photon energy E 0 of 10 keV. When excited along the Cr lines (φ = 0), the GIXRF spectrum shows the behavior of a thin layer (maximum at relative angle ≈ 2) while at φ = 90 a particle-like peak arises (at relative angle ≈ 1).
Performance of the stepper motor driven axes of the sample manipulator and the base frame.
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