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Apparatus for measuring the Seebeck coefficients of highly resistive organic semiconducting materials
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10.1063/1.4799968
/content/aip/journal/rsi/84/4/10.1063/1.4799968
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/4/10.1063/1.4799968
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the apparatus.

Image of FIG. 2.
FIG. 2.

(a) Structure of the sample test stage; (b) temperature control loop of sample gradient; and (c) temperature control loop of thermostat layer.

Image of FIG. 3.
FIG. 3.

The schematic of SC measuring principle. T sample is sample temperature, T hot is hot side temperature, T cold is cold side temperature, ΔT is the difference between cold and hot sides, and V s is the Seebeck voltage with respect to the hot side.

Image of FIG. 4.
FIG. 4.

Seebeck voltage signal conditioning circuit diagram.

Image of FIG. 5.
FIG. 5.

Temperature variance of thermostat layer (T base ) over 2 h.

Image of FIG. 6.
FIG. 6.

Steps of temperature gradient between two sample holders. (Inset) The linear regression line of ΔT and the heated power difference, the correlation coefficient R 2 = 0.999.

Image of FIG. 7.
FIG. 7.

Seebeck measurement result of doped copper (II) phthalocyanine (C32H16CuN8), with resistance of 1.4 × 108 Ω.

Image of FIG. 8.
FIG. 8.

Seebeck voltage curve decreases exponentially when sample resistance is 7 × 1012 Ω.

Image of FIG. 9.
FIG. 9.

Experiment result of 7 × 1012 Ω resistance sample.

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/content/aip/journal/rsi/84/4/10.1063/1.4799968
2013-04-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Apparatus for measuring the Seebeck coefficients of highly resistive organic semiconducting materials
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/4/10.1063/1.4799968
10.1063/1.4799968
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