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Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application
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10.1063/1.4799972
/content/aip/journal/rsi/84/4/10.1063/1.4799972
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/4/10.1063/1.4799972

Figures

Image of FIG. 1.
FIG. 1.

Electron temperature (Te) and ion flux (Jion) as a function of source power and bias power for CHF3 (40 sccm)/Ar (10 sccm) (a) and (b), SF6 (20 sccm) (c) and (d), and O2 (50 sccm) (e) and (f) plasma. Pressures were set as 5 mTorr for SF6 and as 10 mTorr for CHF3/Ar and O2. Bias powers are changed from 10 W (open circle) to 100 W (closed circle).

Image of FIG. 2.
FIG. 2.

Electron temperature and ion flux as a function of source power and chamber pressure for CHF3 (40 sccm)/Ar (10 sccm) (a) and (b), SF6 (20 sccm) (c) and (d), O2 (50 sccm) (e) and (f) plasma with 50 W bias power.

Image of FIG. 3.
FIG. 3.

Electron temperature (Te) and ion flux as a function of source power and bias power for CHF3/Ar (a) and (b), SF6 (c) and (d), O2 (e) and (f) plasma. Bias powers are inset. The distance of the sample from the plasma source was 14 cm. Pressures set as 5 mTorr for SF6 and as 10 mTorr for CHF3/Ar and O2.

Image of FIG. 4.
FIG. 4.

Electron temperature and ion flux as a function of source power and chamber pressure for CHF3 (a) and (b), SF6 (c) and (d), O2 (e) and (f) plasma. The distance of the sample from the plasma source was 14 cm. Bias powers are kept at 50 W.

Image of FIG. 5.
FIG. 5.

Electron temperature (Te) and ion flux (Jion) variations during Si etching in CHF3 (40 sccm)/Ar (10 sccm) plasma at 10 mTorr. Si is etched at 500 W source power and 50 W bias power for 5 min.

Image of FIG. 6.
FIG. 6.

Contour plot of Si etch rates (nm/min) as a function of source power and bias power. CHF3 (40 sccm)/Ar (10 sccm) plasma is used at 10 mTorr. The distance of samples from plasma source was (a) 4 and (b) 14 cm.

Image of FIG. 7.
FIG. 7.

Electron temperature (a) and ion flux (b) variations over 100 s during cycles of 1 s deposition and 2 s etching. Etch profiles are shown in (c).

Image of FIG. 8.
FIG. 8.

Electron temperature (a) and ion flux (b) variations over 100 s during cycles of 10 s deposition and 20 s etching. Etch profiles are shown in (c).

Image of FIG. 9.
FIG. 9.

Electron temperature (a) and ion flux (b) during etching SiO2 (300 nm)/Si wafers for 15 min. CHF3 (40 sccm)/Ar (10 sccm) plasma is used at 10 mTorr. Source power was 300 W and bias power was 50 W.

Image of FIG. 10.
FIG. 10.

Electron temperature (a) and ion flux (b) on SiO2 surfaces (during etching SiO2 layers) and on Si surfaces (after SiO2 layers are etched away). Differences of electron temperature (c) and ion flux (d) are also shown.

Image of FIG. 11.
FIG. 11.

Electron temperature and ion flux during cleaning process for a dirty chamber using oxygen gas: 50 sccm O2, 1000 W source power and 100 W bias power for a plasma-breaking step for 15 s, 800 W source power and 10 W bias power were used for the main cleaning process for (a) 10 min and (b) 5 min.

Tables

Generic image for table
Table I.

Etching conditions (passivation layer deposition time, removal time of passivation layer, etching time, and number of cycles) of the Bosch process and etch depths.

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/content/aip/journal/rsi/84/4/10.1063/1.4799972
2013-04-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/4/10.1063/1.4799972
10.1063/1.4799972
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