Sketch of the illumination of a semiconductor by two laser beams B1 and B2 in the SSPG experiment.
Sketch of the “classical” SSPG experimental setup. For details see text.
Sketch and picture of an automated SSPG experiment. For details see text.
Pictures of the front of the substrate holder (left) and of the rear of it (right).
Prototype of a SSPG apparatus. The 20 cm long ruler in the top left corner gives an order of magnitude of the scale of the system.
Measurements of the ambipolar diffusion length on (a) hydrogenated amorphous silicon, (b) polymorphous silicon, (c) poly-crystalline silicon, and (d) Sb2S3. Symbols are the measured values and the full lines are the fits using Eq. (3) . The diffusion length values are displayed in the figure.
Sketch of the beam paths for different return mirrors (1, 4, 7, and 9). The distance between each vertical dotted line is 5 cm. The numbers in μm correspond to the grating period that would be obtained with such a configuration. For more details see text.
Sketch of the light paths from the beam splitter (BS) to the sample for different beams. Beam 1 is reflected once, goes through the EOM, and hits the sample perpendicularly to its surface. Beam 2 is reflected twice before reaching the moving mirror that sends it to a return mirror and eventually hits the sample with a given angle. Only two paths via return mirrors #1 and #9 are displayed to keep a clear figure.
Some parameters of the thin films studied with the automated SSPG prototype.
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