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Detailed circuit for up to 600 V high-voltage amplifier. The MOSFET transistors are Q1, Q3:BUZ80A; Q2, Q4, Q5:BC548C. The diodes are D1, D2:UF4007; D3, D4, D5, D6:DZ 12V. Resistances are given in Ohms and are of 0.5 W except indicated otherwise. Capacitances are given in Farads and have a voltage limit of 50 V, except C10 and C11 with 500 V and C6 and C7 with 1 kV.
Gain (black points) and phase (red points) of the high-voltage amplifier loaded with 30 nF for input signals V in = 1 (open symbols) and 5 V (full symbols). The upper red-dotted-line shows the zero-degree phase whereas the lower black one indicates the −3 dB criteria for the gain.
Response of the high-voltage amplifier, V out, to square pulses V in of 500 μs and amplitudes ranging 1–6 V. The amplifier is loaded with a 30 nF capacitance.
Noise in the amplifier output signal for zero input. (a) Drift during a 400 ms time-window. (b) Output noise spectrum in a large frequency window. All data were acquired by means of a lock-in amplifier.
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