(a) Raman spectra for silicon at various temperatures. (b) Calibrated peak position and linewidth (FWHM) versus temperature for undoped single crystalline Si(111).
Idealized Raman spectra from silicon at (solid) and (dashed). Atop these spectra, solid vertical lines indicate the extent of the region of interest (ROI) used for thermometry purposes. The dashed vertical line indicates the center of the ROI. For each case, the change of intensity within the ROI as a function of temperature is presented for both the predicted (solid circles) and measured (open circles) cases. Linear fits to these values are shown by the solid (predicted) and dashed (experimental) lines with the slope of the experimental data being notated.
Surface plots of (a) the linear temperature dependence for a range of ROIs and (b) the sum of squared errors associated with this fitted slope. Profiles of the changes in these parameters with a variation in ROI center and width along the dotted lines are given in the line traces below and to the right of each figure, respectively. Dashed lines correspond to the largest temperature sensitivity for a given ROI center and width. All values are normalized to their maximum magnitude.
Diagram of SERT experimental setup.
Optical micrograph and infrared thermography (V = 3V) image of an electrothermal actuated MEMs device. The analyzed device is identical to that investigated by Phinney et al. 37 The legs are 5.5 mm long and 85 μm wide.
Measured thermal profiles of a single leg in the electrothermal actuator shown in Fig. 5 powered at 1 and 3 V. Open symbols are for the SERT based measurements and solid symbols correlate to measurements acquired using a traditional approach. Each profile was taken in the same amount of time, yielding 3 times as many data points for the SERT profile.
Article metrics loading...
Full text loading...