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Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction
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Image of FIG. 1.
FIG. 1.

Experimental setup for measurements of the TMS effect: (a) Optical setup with confocal microscope including a fast photodiode (PD) and a CCD camera, (b) electrical setup showing the connections of the sample and optoelectronic components to the lock-in amplifier and oscilloscope.

Image of FIG. 2.
FIG. 2.

Low laser power and different substrates: TMR (blue circles, left scale) and TMS (red line, right scale) of nominally identical MTJs on (a) Si/SiO and (b) MgO substrates obtained with a laser power of 10 mW and 15 mW, respectively. The arrows represent the relative orientation of the magnetic layers. The TMR and TMS values are given in Table II .

Image of FIG. 3.
FIG. 3.

High laser power: Seebeck voltage (a) and Seebeck current (b) measured at a laser power of 150 mW.

Image of FIG. 4.
FIG. 4.

Time-dependent voltage signals of MTJs on (a) Si/SiO and (b) MgO substrate with a laser power of 10 mW and 15 mW, respectively. As blue circles Simulation Program with Integrated Circuit Emphasis (SPICE) simulations are shown, as described in Sec. V .

Image of FIG. 5.
FIG. 5.

Model circuit for MTJs on (a) insulating MgO and (b) capacitively coupled p-type Si substrates. (c) Inside the samples on Si two heat gradients Δ and Δ produce thermovoltages and , respectively. When the laser is positioned on the MTJ (red) the effective temperature gradient Δ between the contact points and is larger compared to the laser positioned between the MTJ and the edge of the sample (blue).

Image of FIG. 6.
FIG. 6.

(a) Short distances: Measurements in the vicinity of the MTJ; the positions are shown in the inset. Laser spot and MTJ are located at P1, the heated area is sketched in red. (b) Large distances: Measurements of a different MTJ at distances more than factor of 10 larger as in the case of (a).


Generic image for table
Table I.

Material parameters for COMSOL simulations. If not specified otherwise, the values are taken from Refs. . The thermal conductivities used in the simulations are printed in bold letters. Experimental thin film values are given where available.

Generic image for table
Table II.

Comparison of TMR and TMS on MgO and Si/SiO samples.

Generic image for table
Table III.

Basic estimations for calculating the resistance and capacitance in the model circuit for simulations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction