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Piezoelectric bimorph-based scanner in the tip-scan mode for high speed atomic force microscope
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10.1063/1.4818976
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191, People's Republic of China
    2 Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191, People's Republic of China
    3 Department of Applied Physics, Beihang University, Beijing 100191, People's Republic of China
    a) Author to whom correspondence should be addressed. Electronic mail: gyshang@buaa.edu.cn
    Rev. Sci. Instrum. 84, 083706 (2013); http://dx.doi.org/10.1063/1.4818976
/content/aip/journal/rsi/84/8/10.1063/1.4818976
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/8/10.1063/1.4818976
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the assembly of the bimorph-based scanner and the brass holder (a), and photography of the assembly and a PZT-5 sample mounted on the tube scanner (b).

Image of FIG. 2.
FIG. 2.

Block diagram of the high speed AFM system based on the PCI-6115 DAQ card with 4 A/D and 2 D/A channels. When DA0 and DA1 synchronously generate signals to drive the bimorph scanning in x-direction and the tube scanner in y-direction respectively, the AFM deflection signal is synchronously acquired by AD1 for high speed imaging. The piezo-voltage induced by the detection piezo-layer of the bimorph is fed to AD0 for real-time phase compensation and correction of the image distortion caused by sine scanning. A compensation signal from y-scan voltage was used to input into the high-voltage amplifier in z-direction to minimize the additional deflection signal due to the surface tilt.

Image of FIG. 3.
FIG. 3.

(a) Measured scan range as a function of the driving voltage. (b) Frequency spectrum of the induced piezo-voltage of the bimorph.

Image of FIG. 4.
FIG. 4.

Uncorrected high speed AFM image (a) and its section profile (c) and corrected ones (b) and (d) of the standard grating done by real-time subtraction of the pre-measured deflection signal (e) line by line.

Image of FIG. 5.
FIG. 5.

High speed AFM images of (a) the silicon grating with a scan range of 9 × 9 μm and (b) the surface morphology of a commercially available ITO film with a scan range of 1 × 1 μm.

Image of FIG. 6.
FIG. 6.

(a)–(f) Images of the PZT-5 sample taken sequentially with an interval time of 1.264 s and each image acquired in 31.6 ms as the electric field (marked by E) increased from 0 to 40 V/mm. The scan area is 5 × 5 μm. (g) The line profiles obtained in the area marked by the solid line in (a)–(f). The volume of the pore in the lower-left corner got larger as the electric field increased.

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/content/aip/journal/rsi/84/8/10.1063/1.4818976
2013-08-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoelectric bimorph-based scanner in the tip-scan mode for high speed atomic force microscope
http://aip.metastore.ingenta.com/content/aip/journal/rsi/84/8/10.1063/1.4818976
10.1063/1.4818976
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