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Boron ion beam generation using a self-sputtering planar magnetrona)
a)Contributed paper, published as part of the Proceedings of the 15th International Conference on Ion Sources, Chiba, Japan, September 2013.
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10.1063/1.4824643
/content/aip/journal/rsi/85/2/10.1063/1.4824643
http://aip.metastore.ingenta.com/content/aip/journal/rsi/85/2/10.1063/1.4824643
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental arrangement and power supply scheme.

Image of FIG. 2.
FIG. 2.

TOF gate pulse voltage and TOF Faraday current response to the gate pulse. Pressure is 7 × 10−4 Torr, pulsed discharge current is 15 A, repetition rate is 2 pps, DC accelerating voltage is 18.5 kV, discharge pulse duration is 100 s, delay of the TOF gate pulse regarding to beginning of the discharge pulse is 40 s, DC discharge current is 50 mA, working gas is krypton.

Image of FIG. 3.
FIG. 3.

Particle fractions of different ion beam species. Pressure is 5 × 10−4 Torr. DC discharge current is 50 mA, TOF gate pulse delay is 40 s, repetition rate is 5 pps, working gas is krypton.

Image of FIG. 4.
FIG. 4.

Dependence of the lowest possible working pressure on the DC discharge current. The target is anticipatory heated to 400 °C for each point of dependencies. Pulsed discharge current is 10 A.

Image of FIG. 5.
FIG. 5.

Dependence of the ion emission current on accelerating voltage. Curves (1) pressure is 10−3 Torr, (2) 8 × 10−4 Torr, (3) 5 × 10−4 Torr. Pulsed discharge current is 10 A, pulse duration is 100 s, prepetition rate is 5 pps, suppressor voltage is −1 kV, working gas is krypton.

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/content/aip/journal/rsi/85/2/10.1063/1.4824643
2013-10-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron ion beam generation using a self-sputtering planar magnetrona)
http://aip.metastore.ingenta.com/content/aip/journal/rsi/85/2/10.1063/1.4824643
10.1063/1.4824643
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