Experimental arrangement and power supply scheme.
TOF gate pulse voltage and TOF Faraday current response to the gate pulse. Pressure is 7 × 10−4 Torr, pulsed discharge current is 15 A, repetition rate is 2 pps, DC accelerating voltage is 18.5 kV, discharge pulse duration is 100 μs, delay of the TOF gate pulse regarding to beginning of the discharge pulse is 40 μs, DC discharge current is 50 mA, working gas is krypton.
Particle fractions of different ion beam species. Pressure is 5 × 10−4 Torr. DC discharge current is 50 mA, TOF gate pulse delay is 40 μs, repetition rate is 5 pps, working gas is krypton.
Dependence of the lowest possible working pressure on the DC discharge current. The target is anticipatory heated to 400 °C for each point of dependencies. Pulsed discharge current is 10 A.
Dependence of the ion emission current on accelerating voltage. Curves (1) pressure is 10−3 Torr, (2) 8 × 10−4 Torr, (3) 5 × 10−4 Torr. Pulsed discharge current is 10 A, pulse duration is 100 μs, prepetition rate is 5 pps, suppressor voltage is −1 kV, working gas is krypton.
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