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Ion sources for ion implantation technology (invited)a)
a)Invited paper, published as part of the Proceedings of the 15th International Conference on Ion Sources, Chiba, Japan, September 2013.
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/content/aip/journal/rsi/85/2/10.1063/1.4852315
2014-01-14
2014-07-24

Abstract

Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion sources for ion implantation technology (invited)a)
http://aip.metastore.ingenta.com/content/aip/journal/rsi/85/2/10.1063/1.4852315
10.1063/1.4852315
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