1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ion sources for ion implantation technology (invited)a)
a)Invited paper, published as part of the Proceedings of the 15th International Conference on Ion Sources, Chiba, Japan, September 2013.
Rent:
Rent this article for
USD
10.1063/1.4852315
/content/aip/journal/rsi/85/2/10.1063/1.4852315
http://aip.metastore.ingenta.com/content/aip/journal/rsi/85/2/10.1063/1.4852315

Figures

Image of FIG. 1.
FIG. 1.

A cross-sectional view and electrical arrangement of arc chamber of Bernas type ion source.

Image of FIG. 2.
FIG. 2.

A cross-sectional view and electrical arrangement of arc chamber of IHC (indirectly heated cathode) type ion source.

Image of FIG. 3.
FIG. 3.

Halogen cycle of halogen plasma in ion source chamber.

Image of FIG. 4.
FIG. 4.

An overview of cluster ion source and principal of generating cluster ions.

Image of FIG. 5.
FIG. 5.

Molybdenum contamination at BF + implant. Ion source materials are molybdenum and tungsten.

Image of FIG. 6.
FIG. 6.

A typical mass spectrum from Bernus type ion source with AlO sputter targets. (a) Ar gas discharge and (b) BF gas discharge.

Image of FIG. 7.
FIG. 7.

An external view of iG5 ion source.

Image of FIG. 8.
FIG. 8.

Mass spectrum of a high current B+ beam extracted from BF plasma. Boron beam current density of 1 mA/cm (that is about 130 mA) was obtained at the condition of the extraction current of about 700 mA.

Tables

Generic image for table
Table I.

Typical ion implantation and ion source requirements.

Loading

Article metrics loading...

/content/aip/journal/rsi/85/2/10.1063/1.4852315
2014-01-14
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion sources for ion implantation technology (invited)a)
http://aip.metastore.ingenta.com/content/aip/journal/rsi/85/2/10.1063/1.4852315
10.1063/1.4852315
SEARCH_EXPAND_ITEM