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A high sensitivity magnetic field sensor based on magnetoelectric (ME) coupling is presented. The ME sensor FeCuNbSiB/Nickel-PZT-FeCuNbSiB/Nickel is made by bonding magnetization-graded magnetostrictive materials FeCuNbSiB/Nickel at the free ends of the piezoelectric Pb(Zr,Ti)O (PZT) plate. Experiments indicate that the proposed sensor has a zero-bias field sensitivity of 14.7 V/Oe at resonance, which is ∼41.6 times larger than that of previous FeCuNbSiB-PZT-FeCuNbSiB. Furthermore, without external biased field, it can detect dc magnetic field changes as small as ∼9 nT near the resonant frequency. This proposed ME sensor provides new pathways to reducing or even eliminating the need of bias fields for ME sensors.


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