No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Note: Self-biased magnetic field sensor using end-bonding magnetoelectric heterostructure
7.H. Bartehelmess, M. Halverscheid, B. Schiefenhovel, E. Heim, M. Schilling, and R. Zimmermann, IEEE Trans. Appl. Supercond. 11, 657 (2001).
13.J. T. Zhang, P. Li, Y. M. Wen, W. He, A. C. Yang, C. J. Lu, J. Qiu, J. Wen, J. Yang, Y. Zhu, and M. Yu, Rev. Sci. Instrum. 83, 115001 (2012).
17.C. J. Lu, P. Li, Y. M. Wen, A. C. Yang, W. He, J. T. Zhang, J. Yang, J. Wen, Y. Zhu, and M. Yu, Appl. Phys. A 113, 413-421 (2013).
Article metrics loading...
A high sensitivity magnetic field sensor based on magnetoelectric (ME) coupling is presented. The ME sensor FeCuNbSiB/Nickel-PZT-FeCuNbSiB/Nickel is made by bonding magnetization-graded magnetostrictive materials FeCuNbSiB/Nickel at the free ends of the piezoelectric Pb(Zr1−x,Tix)O3
(PZT) plate. Experiments indicate that the proposed sensor has a zero-bias field sensitivity of 14.7 V/Oe at resonance, which is ∼41.6 times larger than that of previous FeCuNbSiB-PZT-FeCuNbSiB. Furthermore, without external biased field, it can detect dc magnetic field changes as small as ∼9 nT near the resonant frequency. This proposed ME sensor provides new pathways to reducing or even eliminating the need of bias fields for ME sensors.
Full text loading...
Most read this month