An examination of tantalum pentoxide thin dielectric films using grazing incidence x-ray reflectivity and powder diffraction
- Conference date: 26-29 June 2000
- Location: Gaithersburg, Maryland (USA)
We have examined a small group of tantalum pentoxide wafers with grazing incidence x-ray reflectivity (GIXR) and powder diffraction. GIXR gives accurate measurements of layer thickness, layer interface widths, and densities for single and multilayer samples. Powder diffraction allows detection of crystallinity, identification of specific phases or verification of amorphous structure. The combination of these two methods permits fairly detailed characterization of polycrystalline thin films. The densities obtained by GIXR vary over a considerable range from 5.08 g/cm3 to 9.10 g/cm3. The theoretical densities for the hexagonal form and the orthorhombic form of are 8.316 g/cm3 and 8.2 g/cm3 respectively. The large variation in density suggests that other oxides may have formed or that other polymorphs of with lower densities may be present in some samples. The powder diffraction results indicate crystallinity in at least some of the samples. While this work has demonstrated good structural characterization, more useful conclusions await study of a well-structured sample matrix.
- X-ray diffraction
- Crystal structure
- X-ray reflectometry
- Amorphous state
- Dielectric thin films
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