Metal doped fullerenes: Microscopy and spectroscopy
- Conference date: 3-10 March 2001
- Location: Kirchberg, Tirol (Austria)
Endohedrally doped fullerenes on highly oriented pyrolytic graphite (HOPG) have been produced by “soft landing” deposition from a mass selected cluster ion beam. Individual clusters have been resolved on the graphite surface using scanning tunneling microscopy. Spectroscopic information has been obtained by taking I(V) scans with the position of the tip held fixed above a fullerene. We have found that the apparent heights of the fullerenes depend on the kind of dopant which is also the case for the electronic structure in the vicinity of the Fermi level. and have band gaps, whereas shows metallic behavior.
- Scanning tunneling microscopy
- Band gap
- Electronic structure
- Fermi levels
- Ion beams
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