Evaluation of interface strength between thin films in an LSI based on fracture mechanics concept
- Conference date: 25-27 July 2001
- Location: Ithaca, New York (USA)
Since an electric device is made of multi-layered sub-micron films, the delamination along the interface is one of the major failure mechanisms. Especially, the delamination initiates at the edge of the interface because the stress singularity is generated due to the mismatch of deformation. This paper aims to evaluate the criterion of interface fracture initiation. The stress singularity at the edge of the interface is similar with that at a crack tip in a material. The stress intensity factor characterizes the stress singular field ahead of the crack and provides the criterion of the crack propagation as the fracture toughness on the basis of the fracture mechanics concept. As an analogy to the stress intensity factor, the criterion of the crack initiation from the edge of interface might be evaluated by the stress intensity governing the stress singularity at the edge. An experiment on films on a silicon substrate is conducted. The stress singularity appears in the vicinity of the edge where the crack initiates and the fracture toughness of the interface is evaluated.
- Fracture mechanics
- Interface structure
- Thin film devices
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