- Conference date: 15-17 April 2002
- Location: Washington, DC (USA)
This paper demonstrates the capability of compact gamma‐ray imaging devices using 3‐dimensional position sensitive CdZnTe semiconductor gamma‐ray spectrometers, developed at the University of Michigan. A prototype imager was constructed and tested using two 1 cm cube 3‐dimensional position sensitive CdZnTe detectors. Energy resolutions of 1.5% FWHM for single pixel events at 662 keV gamma‐ray energy were obtained on both detectors, and an angular resolution of about 5° FWHM was demonstrated. The capabilities of proposed devices, which can cover a wider energy range up to 2.6 MeV, are discussed.
- Image sensors
- II-VI semiconductors
- Gamma ray spectrometers
- Position sensitive detectors
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