- Conference date: 22-25 April 2002
- Location: Gatlinburg, Tennessee (USA)
An absence of fundamental atomic plasma chemistry data (e.g. electron impact cross‐sections) hinders the application of plasma process models in semiconductor manufacturing. Of particular importance is excited state plasma chemistry data for metallization applications. This paper describes important plasma chemistry processes in the context of high density plasmas for metallization application and methods for the calculation of data for the study of these processes. Also discussed is the development of model data sets that address computational tractability issues. Examples of model electron impact cross‐sections for Ni reduced from multiple collision processes are presented.
- Plasma applications
- Semiconductor device modeling
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