- Conference date: 24-28 June 2002
- Location: Rome (Italy)
We report on the intensity modulation of the Si Κα line emitted from a Mo/Si multilayer as a function of the exit angle of the photons. The observation takes place around the direction corresponding to the Bragg diffraction of Si Κα by the multilayer. The sample is irradiated by an electron beam whose the energy is varied between 2 and 6 keV. An important intensity variation is observed within the angular range corresponding to the diffraction pattern of the emitting structure. A 15 % enhancement of the emitted radiation is measured in the Bragg direction of the multilayer, whatever the incident electron energy. This amplification is interpreted on the basis of the reciprocity theorem. A possible application as x‐ray resonator is suggested.
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