Optical Metrology for Ultra‐thin Oxide and High‐K Gate Dielectrics
- Conference date: 24-28 March 2003
- Location: Austin, Texas (USA)
We review the characterization of optical properties of high‐K gate dielectric films and film stacks. Modern high‐K dielectrics typically incorporate an ultra‐thin oxide interfacial layer designed preserve the channel mobility. High‐K filmstack physical characterization data is presented and correlated to the optical response of the material determined via spectroscopic ellipsometry. In‐line measurement of film physical thickness relies on the optical models used for fitting the dielectric function. Optimal optical models for use in process control are discussed, as well as limitations of spectroscopic ellipsometry to characterize high‐K dielectric/interfacial oxide stacks. We also discuss the application of spectroscopic ellipsometry to characterize high‐K dielectrics on silicon‐on‐insulator substrates.
- Dielectric thin films
- Optical spectroscopy
- Dielectric function
- Gate dielectric films
- Optical materials
- Optical metrology
- Optical properties
- Process monitoring and control
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