- Conference date: 13-19 July 2003
- Location: Crete (Greece)
The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the ΔE and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the ΔE stage of the order of 2μm.
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