In silicon wafer processing, an exposure process is necessary to warm a wafer uniformly to a certain temperature to overcome this process, it is consequence to minimize the temperature difference on the surface of heater in a tolerance level.
It is supposed that the temperature difference during a rise time to a setting temperature is also important. In order to develop a new heater by a conventional experimental methods are expersive, time consuming and have some difficulties to measure temperature charge in transient process.
These problems can be solved by numerical analysis. As a preliminary work , the behavior of heater should be studied.
In this work, PID control of heater in heat treatment process is analyzed numerically by finite element method. We consider temperature gradient on the surface of heater in heat treatment process. It is fairly consist consist between the experimental results and the analysis ones.
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