- Conference date: 14-16 June 2004
- Location: Austin, Texas (USA)
Electromigration in narrow (bamboo‐like) Cu Damascene lines capped with either a CoWP, Ta/TaN, SiNx, or SiCxNyHz layer is reviewed. A thin CoWP or Ta/TaN cap on top of the Cu line surface significantly reduces interface diffusion and improves the electromigration lifetime when compared with lines capped with SiNx or SiCxNyHz. Activation energies for electromigration were found to be 1.9–2.4 eV, 1.4 eV, and 0.85–1.1 eV for the Cu lines capped with CoWP, Ta/TaN, and SiNx or SiCxNyHz, respectively. Relationships between line width, diffusion path, void nucleation sites and lifetime are presented. Resistance changes in the CoWP coated lines were related to the solubility and diffusivity of Co in Cu such that void growth caused by electromigration was detectable only as a significant resistance increase over that caused by the Co. The solubility and diffusivity of Co in Cu was determined from line resistance measurements of thermally annealed Cu lines with CoWP caps. The activation energy of Co diffusion in Cu lines was found to be 2.2 eV, and the solubility limit of Co in Cu was found to be 18e(−0.57eV/kT) atomic percent.
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