- Conference date: 5-8 October 2004
- Location: Toki (Japan)
Currently the emission of both Xe and Sn are being investigated as sources for EUV lithography. In Xe the bulk of the emission in the region of interest, 13.5 nm, originates from one ion stage, Xe XI, while in Sn, the emission at this wavelength arises from resonance transitions in a range of stages and thus is potentially more intense. However essentially no data for these ions exists making modeling of the plasma processes involved and estimation of the conversion efficiencies attainable and their dependence on experimental parameters extremely difficult. Here we provide an overview of some recent results obtained by our group and compare them with data from other researchers.
MOST READ THIS MONTH
MOST CITED THIS MONTH
Article metrics loading...