- Conference date: 26-30 July 2004
- Location: Flagstaff, Arizona (USA)
Employing the Cleaved Edge Overgrowth technique, GaAs/AlGaAs quantum wire cascade structures have been fabricated. The quantum wire states are formed by the perpendicular overlap of two confinement potentials, one resulting from a strong potential modulation generated by quantum wells along the ‐crystal direction, and a second resulting from an additional in‐plane confinement generated by a silicon‐δ‐doping along the ‐crystal direction. Radiative electronic transitions between discrete energy levels in coupled quantum wires are predicted in these samples. Above a threshold of 200 mA, mid‐infrared electroluminescence is observed at an energy of 150 meV. The devices were temperature controlled at 20 K. The emission intensity is clearly current dependent and rises linearly with a slope efficiency of 0.1 nW/mA up to a maximum output power of 17 nW.
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