- Conference date: 26-30 July 2004
- Location: Flagstaff, Arizona (USA)
In situ overgrowth of an undoped GaAs/Al0.3Ga0.7As superlattice with a gate electrode separated by a barrier layer produces an array of strongly coupled quantum wires. The gate allows direct control of edge channel density. The observed transport properties are very sensitive to the transport channel length. Samples with long superlattices exhibit transport characteristics dominated by an inhomogeneous density and field distribution along the channel. In shorter superlattice samples a leakage current through the bulk superlattice stabilizes the field distribution in the two‐dimensional channel and allows the observation of current‐voltage characteristics that exhibit strong negative differential conductance without the formation of electric field domains.
- Statistical properties
- Transport properties
- Electric fields
- Electrical properties
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