- Conference date: 26-30 July 2004
- Location: Flagstaff, Arizona (USA)
We present a new simulation strategy to study the non‐equilibrium carrier dynamics in quantum devices with open boundaries. We propose a kinetic description of the system‐reservoir thermalization process: the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann‐transport approach via an effective scattering mechanism between the highly non‐thermal device electrons and the thermal carrier distribution of the reservoir.
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