- Conference date: 19-23 September 2005
- Location: Salamanca (Spain)
The Generation‐Recombination noise and two components of the 1/f noise of the base current have been identified in SOI SiGe HBTs. It is shown that the GR noise is generated in the emitter depletion layer. One component of the 1/f noise characterized by SIB∼(IB)1.7 is typical for HBTs made by selective growth of the Si collector and can be due to the mechanical stress created by that technology. Another component is typical for the devices with a polySi emitter being due to fluctuations of the transparency of the interfacial oxide at the polySi/Si interface.
- 1/f noise
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