1887
banner image
Low‐Frequency Noise in SOI SiGe HBTs Made by Selective Growth of the Si Collector and Non‐Selective Growth of SiGe Base
Rent:
Rent this article for
USD
10.1063/1.2036746
/content/aip/proceeding/aipcp/10.1063/1.2036746
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/proceeding/aipcp/10.1063/1.2036746
2005-08-25
2014-10-31
This is a required field
Please enter a valid email address
229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: Low‐Frequency Noise in SOI SiGe HBTs Made by Selective Growth of the Si Collector and Non‐Selective Growth of SiGe Base
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.2036746
10.1063/1.2036746
SEARCH_EXPAND_ITEM