In‐Line Compositional and Thickness Metrology Using XPS for Ultra‐Thin Dielectric Films
- Conference date: 15-18 March 2005
- Location: Richardson, Texas (USA)
65 nm and 45 nm silicon devices will utilize compositionally critical processes for gate dielectrics, capacitor dielectrics, gate and capacitor electrodes, and ultra shallow junction layers. For example, small changes in nitrogen composition have been correlated with unacceptable shifts in electrical properties of devices with SiOxNy gate dielectrics. Present optically‐based metrology technologies for such applications are reaching limits for precise thickness measurements and do not provide direct and adequately precise compositional information. As a result, mature analytical techniques, such as x‐ray photoelectron spectroscopy (XPS), are now being transitioned to in‐line production metrology usage.
We discuss the application of XPS optimized for 200/300 mm production to compositional and thickness metrology of SiOxNy and high k gate dielectrics, high k capacitor dielectrics, and new electrode materials. The development of optimized hardware, robust data analysis algorithms and high throughput, fully automated operation has led to production implementation of XPS in advanced logic applications. The precise correlation of plasma nitridation metrology data with electrical device parameters has proven valuable in detecting process drifts early in the process flow, without the need to prepare devices through the first metal layer for testing. High density maps of film thickness and composition have enabled optimization of oxidation, nitridation and post‐nitridation anneal processes for SiOxNy film production for 90 nm, 65 nm and below. High precision compositional and thickness metrology data for high‐k gate and capacitor dielectrics is also presented.
- Dielectric thin films
- X-ray photoelectron spectroscopy
- Dielectric devices
- Electrical properties
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