- Conference date: 10-17 August 2005
- Location: Orlando, Florida (USA)
We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in a (Ga,Mn)As thin film. We find an excellent agreement between experimental results and theoretical expectations, if the intrinsic dependence of the resistivity ρ⊥ on magnetic induction B = |μ0(H+M)| is taken into account. Our results provide the first fully quantitative validation of the theory for magnetotransport through a single ferromagnetic domain. As it yields μ⊥, our analysis moreover opens a pathway for the study of the intrinsic magnetoresistance mechanisms, pinpointing the relevance of magneto‐impurity scattering in (Ga,Mn)As.
- Ferromagnetic materials
- Electrical resistivity
- Magnetic films
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