- Conference date: 28 August-1 September 2006
- Location: National Park Kopaonik (Serbia)
Ion beam irradiation of a‐Si/Fe/c‐Si trilayers with 350‐MeV Au ions and of Fe/a‐Si bilayers with 250‐keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a‐Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75±0.15 was observed relative to Fe/c‐Si. For electronic stopping, the enhancement is 3.21 ±0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a‐Si relative to c‐Si, which prolongates the relaxation phase of the ion‐induced thermal spikes.
- Ion beams
- Amorphous magnetic materials
- Amorphous semiconductors
- Amorphous state
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