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Design, Fabrication and Characterization of GaAs‐Based Interdigital‐Gated HEMT Devices for Solid‐State THz Wave Amplifiers
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10.1063/1.2739849
/content/aip/proceeding/aipcp/10.1063/1.2739849
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.2739849
/content/aip/proceeding/aipcp/10.1063/1.2739849
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/content/aip/proceeding/aipcp/10.1063/1.2739849
2007-05-01
2015-07-31
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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: Design, Fabrication and Characterization of GaAs‐Based Interdigital‐Gated HEMT Devices for Solid‐State THz Wave Amplifiers
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.2739849
10.1063/1.2739849
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