Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG
- Conference date: 9-14 September 2007
- Location: Tokyo (Japan)
In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises statistically, as the result, we confirmed that appearance probabilities in the TEG and noise intensities of RTS are dependent on gate sizes.
- Random noise
- Statistical analysis
- Acoustic noise measurement
- Time measurement
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