- Conference date: 27–29 March 2007
- Location: Gaithersburg (MD)
We provide an overview of state‐of‐the‐art metrology of periodic trench structures based on infrared reflectance spectroscopy, focusing on measuring dimensional parameters of trench arrays in silicon. The presentation outlines classes of trench metrology problems for which infrared optical measurement is advantageous versus visible/UV techniques, such as measuring very high aspect ratio trenches used to form dynamic random access memory capacitors. We discuss modeling approaches and compare effective medium models with rigorous coupled wave analysis calculations. The discussion is illustrated by infrared reflectance spectra from both model and real‐life examples of trench structures.
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