The Methodology Effects on Surface Morphology Pattern of Porous Semiconductors
- Conference date: 26–28 December 2007
- Location: Kuala Terengganu (Malaysia)
Porous GaP have studied fabricated by using an argon‐ion laser beam (LIE) of energy 2.41 eV. We have studied the surface morphology of porous layers obtained using a Scanning Electron Microscope (SEM). The morphology of porous GaP layers changes rapidly with laser power densities and irradiation times. This advanced fabrication method have been used for synthesis porous silicon (p‐Si). The optical characteristic was used to illustrate changes in surface morphology and the intensity of emission of porous form as a function of etching conditions. The surface morphology studies have demonstrated the characterization of porous silicon. As well as both the size and shape of the structure depend on the nature concentration of etchant solution. The different size of pores form at different area of GaN shows that the etching rate is not uniform through out the whole surface of GaN. The porous GaN generated by electrochemical etching technique does not always produce similar surface morphology. However, the average pore size of the samples was found to be influenced significantly by the electrolyte concentration rather than applied voltage. The average pore size of the samples was increased with the increase of the electrolyte concentration.
- Surface morphology
- III-V semiconductors
- Laser beam effects
- Scanning electron microscopy
- Semiconductor device fabrication
- Surface patterning
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