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Effect of Varying Quantum Well Thickness on the Performance of InGaN/GaN Single Quantum Well Laser Diode
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/content/aip/proceeding/aipcp/10.1063/1.2940616
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.2940616
/content/aip/proceeding/aipcp/10.1063/1.2940616
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/content/aip/proceeding/aipcp/10.1063/1.2940616
2008-05-20
2016-07-26

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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
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