- Conference date: 26–28 December 2007
- Location: Kuala Terengganu (Malaysia)
Quantum well width effect on threshold current density and optical performance of InGaN/GaN single quantum well (SQW) laser diode was determined and investigated. Various thickness (2–5 nm) of In0.13Ga0.87N wells and 12 nm GaN barriers were selected as an active region for Fabry‐Perot (FP) cavity waveguide edge emitting laser diode. The quantum confined Stark created a strong quantum well width dependence of threshold current density in the strained InGaN/GaN quantum well laser. Based on our simulation investigation, the exciton localization effect dominated the recombination emission in the thin quantum well structure; while the quantum confined stark effect (QCSE) dominated the recombination emission in the wide quantum well structure. Higher characteristic temperatures were obtained and significantly improved when the quantum well thickness was (2 to 3 nm).
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