Synthesis of GaAs Oxides Grown During Electrochemical Formation of Porous GaAs in HF Based Solution
- Conference date: 26–28 December 2007
- Location: Kuala Terengganu (Malaysia)
Single crystalline n‐type GaAs was made porous by anodic etching in a hydrofluoric acid based solution. The morphology, chemical composition and photoluminescence (PL) of the porous layer were investigated. It has been shown that the porous layer consists of and submicron transparent crystals grown on the porous GaAs (π‐GaAs) skeleton under certain chemical conditions during the electrochemical etching of GaAs. Energy dispersive X‐ray indicated stoichiometric composition of these crystals. These crystalline deposits have been investigated by X‐ray diffraction. Photoluminescence measurement under excitation at 325 nm showed that these crystals had three emission peaks at 363, 410, and 428 nm besides the π‐GaAs peaks.
- Crystal growth
- Chemical composition
- Crystal stoichiometry
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