The Effect Of Dose Exposure In Electron Beam Lithography
- Conference date: 26–28 December 2007
- Location: Kuala Terengganu (Malaysia)
Electron beam lithography is one of the most promising of nanolithographic techniques. The setup is similar to a Scanning Electron Microscope (SEM) and often a scanning electron microscope is used. EBL is able to provide high resolution patterning. However, the effect of electron scattering in resist and substrate leads to an undesired influence in the regions adjacent to those exposed by the electron beam. This effect is called the proximity effect. In this paper, we investigated the effect of dose exposure in Electron beam lithography (EBL) and proximity effect. We also show the image for several of dose exposure.
- Electron beams
- Scanning electron microscopy
- Superconducting proximity effects
- Electron scattering
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