The Tc of Gd, when subjected to hydrostatic pressures, decreases by about 1°C/kbar. It is to be expected then that film stresses of the order of kbars should also change the Tc of Gd. High purity polycrystalline films of Gd were deposited onto oxidized
silicon and sapphire wafers by rf sputtering. By varying the substrate temperatures during deposition, it was possible to vary the film stress from −6.5 kbar (compressive) to +1 kbar (tensile). The variation in Tc was linear with a slope of 1.8°C/kbar which is in good agreement with the value reported above for bulk Gd of about 1°C/kbar.