- Conference date: 8–13 June 2008
- Location: Monterey (California)
High dose implant resist cleaning for ultra‐shallow junction at 45 nm and beyond requires complete photo‐resist and residual removal with near‐zero substrate loss and minimized dopant loss. Conventional fluorine‐containing plasma ashing results in significant dopant bleaching and a new partial plasma strip process was developed in this work to reduce dopant loss.
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