Comparison of B, & for Extension and & In HALO Implantation for 32 nm Node Using Various Diffusion‐less Annealing Techniques
- Conference date: 8–13 June 2008
- Location: Monterey (California)
We compared various p‐type dopant species for source drain extension (SDE) and pocket/HALO implantation when using diffusion‐less annealing techniques for ultra‐shallow junctions (USJ) at the 32 nm node. For SDE, 200 eVB, and with and without 5 keVGe‐PAI were studied and for HALO, 45 keVIn and Diffusion‐less Xe‐lamp Flash anneal (FLA), 900 °C spike anneal, 700 °C SPE anneal and their combinations were examined for junction quality (dopant activation, junction leakage and implant damage annealing recovery) using RsL, photoluminescence (PLi) and thermal‐wave (TW) rapid process optimization metrology techniques. Ge‐PAI improved dopant activation (Rs) for the Flash and SPE anneals but not with spike anneal and had the highest Rs values due to retained dose limits. Also resulted in junction leakage degradation but the 900 °C spike anneal resulted in stable defects and complete implant damage recovery. For HALO, the dopant activation is dose limited for boron dopant species while for indium dopant it is solid solubility limited (anneal temperature dependent) so indium had the highest Rs values but no degradation in junction leakage were detected.
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